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Silicon Switching Diodes
BAS 19 ... BAS 21
q
High-speed, high-voltage switch
Type BAS 19 BAS 20 BAS 21
Marking JPs JRs JSs
Ordering Code (tape and reel) Q62702-A95 Q62702-A113 Q62702-A79
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Total power dissipation, TS = 70 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
Symbol BAS 19 VR VRM IF IFM Ptot Tj Tstg 100 120
Values BAS 20 150 200 250 625 350 150 - 65 ... + 150
Unit BAS 21 200 250 mA mW C V
Rth JA Rth JS

300 230
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
07.94
BAS 19 ... BAS 21
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage1) I(BR) = 100 A V(BR) BAS 19 BAS 20 BAS 21 VF - - IR - - - - 100 100 nA
A
Values typ. max.
Unit
V 120 200 250 - - - - - - - - 1 1.25
Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 30 mA, IR = 30 mA, RL = 100 measured at IR = 3 mA Test circuit for reverse recovery time
CD trr
- -
- -
5 50
pF ns
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
1)
Pulse test: tp 300 s, D = 2 %.
Semiconductor Group
2
BAS 19 ... BAS 21
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF)
Forward voltage VF = f (TA)
Semiconductor Group
3
BAS 19 ... BAS 21
Reverse voltage VR = f (TA)
Peak forward current IFM = f (t)
Semiconductor Group
4

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